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NASA Glenn SiC Electronics Device Papers Index
  • P. G. Neudeck, D. J. Larkin, J. E. Starr, J. A. Powell, C. S. Salupo, and L. G. Matus, "Electrical Characterization of 3C- and 6H-SiC PN Junction Diodes Grown by CVD on Low-Tilt-Angle 6H-SiC Wafers," presented at Workshop on SiC Materials and Devices, Charlottesville, VA, 1992. [Presentation (310 KB PDF File)]

  • P. G. Neudeck, D. J. Larkin, J. E. Starr, J. A. Powell, C. S. Salupo, and L. G. Matus, "Four-Fold Improvement of 3C-SiC PN Junction Diode Blocking Voltage Obtained Through Improved CVD Epitaxy on Low-Tilt-Angle 6H-SiC Wafers," Late news paper at 1992 IEEE International Electron Devices Meeting, San Francisco, CA, IEDM Technical Diggest, pp. 1003-1005. [Abstract (80 KB PDF File)]

  • P. G. Neudeck, D. J. Larkin, J. A. Powell, and L. G. Matus, "High Voltage 6H-SiC Rectifiers: Prospects and Progress," IEEE 51st Annual Device Research Conference, Santa Barbara, CA, 1993. [Abstract (104 KB PDF File)]

  • P. G. Neudeck, D. J. Larkin, J. A. Powell, L. G. Matus, and C. S. Salupo, "2000 V 6H-SiC PN Junction Diodes", in Institute of Physics Conference Series, no. 137, Silicon Carbide and Related Materials: Proceedings of the Fifth International Conference, Bristol, United Kingdom: IOP Publishing, 1994, pp. 475-479. [Paper (110 KB PDF File)] [Presentation (536 KB PDF File)]

  • P. G. Neudeck and J. A. Powell, "Performance Limiting Micropipe Defects in Silicon Carbide Wafers," IEEE Electron Device Letters, vol. 15, no. 2, pp. 63-65, 1994. [Paper (HTML)] [Paper (356 K PDF File)]

  • P. G. Neudeck, D. J. Larkin, J. E. Starr, J. A. Powell, C. S. Salupo, and L. G. Matus, "Electrical Properties of Epitaxial 3C- and 6H-SiC p-n Junction Diodes Produced Side-by-Side on 6H-SiC Wafers," IEEE Transactions on Electron Devices, vol. 41, no. 5, pp. 826-835, 1994. [Paper (1.1 MB PDF File)]

  • P. G. Neudeck, J. B. Petit, and C. S. Salupo, "Silicon Carbide Buried-Gate Junction Field Effect Transistors for High-Temperature Power Electronic Applications," Transactions Second International High Temperature Electronic Conference held in Charlotte NC, published by Sandia National Laboratories, Albuquerque NM, 1994, pp. X-23 - X-28. [Paper (320 KB PDF File)] [Presentation (1.4 MB PDF File)]

  • P. G. Neudeck, C. Fazi, and J. D. Parsons, "Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes," Transactions Third International High Temperature Electronics Conference, Albuquerque, NM, 1996, pp. XVI-15 - XVI-20. [Paper (164 KB PDF File)] [Presentation (1.4 MB PDF File)]

  • P. G. Neudeck, D. J. Larkin, and C. Fazi, "Highly Reliable Positive Temperature Coefficient of Breakdown in 4H-SiC PN Junction Rectifiers," Late news presented at 54th Annual IEEE Device Research Conference, Santa Barbara, CA, 1996. [Abstract (120 KB PDF File)] [Presentation (708 KB PDF File)]

  • P. Neudeck and C. Fazi, "Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers," IEEE Electron Device Lett., vol. 18, no. 3, pp. 96-98, 1997. [Paper (76 KB PDF File)]

  • C. Fazi and P. Neudeck, "Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors," 1997 IEEE MTT-S International Microwave Symposium Digest, vol. 1, pp. 49-51, 1997. [Paper (480 KB PDF File)]

  • P. G. Neudeck, "Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient Analysis," presented at 39th Annual IEEE/TMS Electronic Materials Conference, Ft. Collins, CO, 1997. [Presentation (1 MB PDF File)]

  • P. Neudeck and C. Fazi, "Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties", in Materials Science Forum, vol. 264-268, Silicon Carbide, III-Nitrides, and Related Materials, G. Pensl, H. Morkoc, B. Monemar, and E. Janzen, Eds. Switzerland: Trans Tech Publications, 1998, pp. 1037-1040. [Paper (50 KB PDF File)] [Presentation (1 MB PDF File)]

  • P. G. Neudeck, W. Huang, and M. Dudley, "Breakdown Degradation Associated With Elementary Screw Dislocations in 4H-SiC P+N Junction Rectifiers", in Materials Research Society Symposia Proceedings, vol. 483, Power Semiconductor Materials and Devices, S. J. Pearton, R. J. Shul, E. Wolfgang, F. Ren, and S. Tenconi, Eds. Warrandale, PA: Materials Research Society, 1998, pp. 285-294. [Paper (670 KB PDF File)] [Presentation (2 MB PDF File)]

  • P. G. Neudeck, "Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient Analysis," Journal of Electronic Materials, vol. 27., no. 4, pp. 317-323, 1998. [Paper (110 KB HTML)]
  • P. G. Neudeck, W. Huang, M. Dudley, and C. Fazi, "Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications", in Materials Research Society Symposia Proceedings, vol. 512, Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, S. Denbaars, M. S. Shur, J. Palmour, and M. Spencer, Eds. Warrandale, PA: Materials Research Society, 1998, pp. 107-112. [Paper (60 KB PDF File)] [Presentation (1 MB PDF File)]

  • P. G. Neudeck, W. Huang, and M. Dudley, "Breakdown Degradation Associated With Elementary Screw Dislocations in 4H-SiC P+N Junction Rectifiers," Solid-State Electronics, vol. 42, no. 12, pp. 2157-2164, 1998. [Paper (412 KB PDF File)]

  • P. G. Neudeck, W. Huang, and M. Dudley, "Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties," IEEE Transactions on Electron Devices, vol. 46, no. 3, pp. 478-484, 1999. [Paper (170 KB PDF File)]

  • P. G. Neudeck and C. Fazi, "Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p+n Junction Diodes - Part 2: Dynamic Pulse-Breakdown Properties," IEEE Transactions on Electron Devices, vol. 46, no. 3, pp. 485-492, 1999. [Paper (180 KB PDF File)]

  • P. G. Neudeck, "Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices", in Materials Science Forum, vol. 469-472, Silicon Carbide and Related Materials 1999, C. H. Carter, Jr., R. P. Devaty, and G. S. Rohrer, Eds. Switzerland: Trans Tech Publications, 2000, pp. 469-472. [Paper (32 KB PDF File)]

  • C. M. Schnabel, M. Tabib-Azar, P. G. Neudeck, S. G. Bailey, H. B. Su, M. Dudley, and R. P. Raffaelle, "Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes", in Materials Science Forum, vol. 338-342, Silicon Carbide and Related Materials 1999, C. H. Carter, Jr., R. P. Devaty, and G. S. Rohrer, Eds. Switzerland: Trans Tech Publications, 2000, pp. 489-492. [Paper (3 MB PDF File)]

  • P. G. Neudeck, G. M. Beheim, and C. S. Salupo, "600 C Logic Gates Using Silicon Carbide JFET's," Government Microcircuit Applications Conference Technical Digest, Anahiem, CA, 2000, pp. 421-424. [Paper (1 MB PDF File)]

  • P. G. Neudeck, M. A. Kuczmarski, M. Dudley, W. M. Vetter, H. B. Su, L. J. Keys, and A. J. Trunek, "Investigations of Non-Micropipe X-ray Imaged Crystal Defects in SiC Devices", in Materials Research Society Symposia Proceedings, vol. 622, Wide-Bandgap Electronic Devices, R. J. Shul, F. Ren, M. Murakami, and W. Pletschen, Eds. Warrandale, PA: Materials Research Society, 2000. [Paper (6 MB PDF File)]

  • R. S. Okojie, D. Spry, J. Krotine, C. Salupo, and D. R. Wheeler, "Stable Ti/TaSi2/Pt Ohmic Contacts on N-Type 6H-SiC Epilayer at 600C in Air", in Materials Research Society Symposia Proceedings, vol. 622, Wide-Bandgap Electronic Devices, R. J. Shul, F. Ren, M. Murakami, and W. Pletschen, Eds. Warrandale, PA: Materials Research Society, 2000. [Paper (332 KB PDF File)]

  • R. S. Okojie, D. Lukco, Y. L. Chen, D. Spry, and C. Salupo, "Reaction Kinetics of Thermally Stable Contact Metallization on 6H-SiC", in Materials Research Society Symposia Proceedings, vol. 640, Wide-Bandgap Electronic Devices, A.K. Agarwal, J.A. Cooper, Jr., E. Janzen, M. Skowronski, Eds. Warrandale, PA: Materials Research Society, 2001. [Paper (3.4 MB PDF File)]

  • S. Tumakha, L. J. Brillson, G. H. Jessen, R. S. Okojie, D. Lukco, M. Zhang, and P. Pirouz,"Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 2, pp. 554-560, 2002. [Paper (276 KB PDF File)]

  • R. S. Okojie, D. Lukco, Y. L. Chen, and D. J. Spry,"Reliability Assessment of Ti/TaSi2/Pt Ohmic Contacts on SiC After 1000 h at 600 C," Journal of Applied Physics, vol. 91, no. 10, pp. 6553-9559, 2002. [Paper (664 KB PDF File)]

  • R. N. Simons and P. G. Neudeck, "Intermodulation Distortion Performance of Silicon Carbide Schottky Barrier RF Mixer Diodes," IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 2, pp. 669-672, 2003. [Paper (301 KB PDF File)]

  • D. J. Spry, A. J. Trunek, and P.G. Neudeck, "High Breakdown Field P-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas," in Materials Science Forum, vol. 457-460, Silicon Carbide and Related Materials 2003, R. Madar, J. Camassel, and E. Blanquet, Eds. Switzerland: Trans Tech Publications, 2004, pp. 1061-1064. [Paper (476 KB PDF File]

  • G. W. Hunter, P. G. Neudeck, J. Xu, D. Lucko, A. Trunek, M. Artale, P. Lampard, D. Androjna, D. Makel, B. Ward, and C. C. Liu, "Development of SiC-Based Gas Sensors for Aerospace Applications," in Materials Research Society Symposium Proceedings, vol. 815, Silicon Carbide 2004 - Materials, Processing, and Devices, M. Dudley, P. Gouma, T. Kimoto, P. G. Neudeck, and S. E. Saddow, Eds. Warrendale, PA: Materials Research Society, 2004, pp. 287-297. [Paper (516 KB PDF File)]

  • D. Spry, P. Neudeck, R. Okojie, L. Y. Chen, G. Beheim, R. Meredith, W. Mueller, and T. Ferrier, "Electrical Operation of 6H-SiC MESFET at 500 C for 500 Hours in Air Ambient," 2004 IMAPS International High Temperature Electronics Conference, Santa Fe, NM, May 18-20, 2004. [Paper (2 MB PDF File)]

  • P. G. Neudeck, D. J. Spry, and A. J. Trunek, "Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC," in Materials Science Forum, vol. 527-529, Silicon Carbide and Related Materials 2005, R. P. Devaty, D. J. Larkin, and S. E. Saddow, Eds. Switzerland: Trans Tech Publications, 2006, pp. 1335-1338. [Paper (572 KB PDF File)]

  • L. Y. Chen, D. J. Spry, and P. G. Neudeck, "Demonstration of 500 C AC Amplifier Based on SiC MESFET and Ceramic Packaging," 2006 IMAPS International High Temperature Electronics Conference, Santa Fe, NM, May 15-18, 2006, pp. 240-246. [Paper (604 KB PDF File)]