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NASA Glenn SiC Electronic Materials & Crystal Growth Papers Index
  • D. J. Larkin, P. G. Neudeck, J. A. Powell, and L. G. Matus, "Site-Competition Epitaxy for Controlled Doping of CVD Silicon Carbide", in Institute of Physics Conference Series, no. 137, Silicon Carbide and Related Materials, M. G. Spencer, R. P. Devaty, J. A. Edmond, M. A. Khan, R. Kaplan, and M. Rahman, Eds. Bristol: IOP Publishing, 1994, pp. 51-54. [Paper (56 KB PDF File)]

  • J. A. Powell, D. J. Larkin, P. G. Neudeck, J. W. Yang, and P. Pirouz, "Investigation of Defects in Epitaxial 3C-SiC, 4H-SiC and 6H-SiC Films Grown on SiC Substrates", in Institute of Physics Conference Series, no. 137, Silicon Carbide and Related Materials, M. G. Spencer, R. P. Devaty, J. A. Edmond, M. A. Kahn, R. Kaplan, and M. Rahman, Eds. Bristol: IOP Publishing, 1994, pp. 161-164. [Paper (92 KB PDF File)]

  • J. A. Powell, D. J. Larkin, P. B. Abel, L. Zhou, and P. Pirouz, "Effect of Tilt Angle on the Morphology of SiC Epitaxial Films Grown on Vicinal (0001)SiC Substrates", in Institute of Physics Conference Series, vol. 142, Silicon Carbide and Related Materials1995, S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima, Eds. Bristol, UK: Institutue of Physics Publishing, 1996, pp. 77-80. [Paper (616 KB PDF File)]

  • J. A. Powell, D. J. Larkin, L. Zhou, and P. Pirouz, "Sources of Morphological Defects in SiC Epilayers," Transactions Third International High Temperature Electronics Conference, Sandia National Laboratories, Albuquerque, NM, 1996, pp. II-3 - II - 8. [Paper (428 KB PDF File)]

  • D. J. Larkin, "SiC Dopant Incorporation Control Using Site-Competition CVD"Physica Status Solid B, vol. 202, no. 1, pp. 305-320, 1997. [Paper (400 KB PDF File)]

  • J. A. Powell and D. J. Larkin, "Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide"Physica Status Solid B, vol. 202, no. 1, pp. 529-548, 1997. [Paper (652 KB PDF File)]

  • J. A. Powell, D. J. Larkin, and A. J. Trunek, "Use of Gaseous Etching for the Characterization of Structural Defects in Silicon Carbide Single Crystals", in Materials Science Forum, vol. 264-268, Silicon Carbide, III-Nitrides, and Related Materials, G. Pensl, H. Morkoc, B. Monemar, and E. Janzen, Eds. Switzerland: Trans Tech Publications, 1998, pp. 421-424. [Paper (392 KB PDF File)]

  • J. Powell, P. Neudeck, A. Trunek, G. Beheim, L. Matus, J. R. Hoffman, and L. Keys, "Growth of Step-Free Surfaces on Device-Size (0001)SiC Mesas," Applied Physics Letters, vol. 77, no. 10, pp. 1449-1451, 2000. [Paper (276 KB PDF File)]

  • Robert S. Okojie, Leonard J. Brillson, Sergey Tumakha, Gregg Jenseen, Ming Xhang and Pirouz Pirouz, "Observation of Oxidation-Induced 4H-SiC-3C-SiC Polytypic Transformation," Applied Physics Letters, vol. 79, no. 19, pp. 3056-3058, 2001. [Paper (260 KB PDF File)]

  • P. G. Neudeck, J. A. Powell, A. Trunek, D. Spry, G. M. Beheim, E. Benavage, P. Abel, W. M. Vetter, and M. Dudley, "Homoepitaxial "Web Growth" of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces", in Materials Science Forum, vol. 389-393, Silicon Carbide and Related Materials 2001, S. Yoshida, S. Nishino, H. Harima, and T. Kimoto, Eds. Switzerland: Trans Tech Publications, 2002 pp. 251-254. [Paper (4.8 MB PDF File)]

  • P. G. Neudeck, J. A. Powell, A. J. Trunek, X. R. Huang, and M. Dudley, "Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy", in Materials Science Forum, vol. 389-393, Silicon Carbide and Related Materials 2001, S. Yoshida, S. Nishino, H. Harima, and T. Kimoto, Eds. Switzerland: Trans Tech Publications, 2002 pp. 311-314. [Paper (2.7 MB PDF File)]

  • Robert S. Okojie, Leonard J. Brillson, Sergey Tumakha, Gregg Jenseen, Ming Xhang and Pirouz Pirouz, "4H- to 3C-SiC Polytypic Transformation During Oxidation," in Materials Science Forum, vol. 389-393, Silicon Carbide and Related Materials 2001, S. Yoshida, S. Nishino, H. Harima, and T. Kimoto, Eds. Switzerland: Trans Tech Publications, 2002, pp. 451-454. [Paper (4.8 MB PDF File)]

  • Robert S. Okojie, Dorothy Lukco, Luann Keys, "Surface Morphology and Chemistry of 4H- and 6H-SiC After Cyclic Oxidation," in Materials Science Forum, vol. 389-393, Silicon Carbide and Related Materials 2001, S. Yoshida, S. Nishino, H. Harima, and T. Kimoto, Eds. Switzerland: Trans Tech Publications, 2002, pp. 1101-1104. [Paper (1.1 MB PDF File)]

  • P. G. Neudeck, J. A. Powell, G. M. Beheim, E. L. Benavage, P. B. Abel, A. J. Trunek, D. J. Spry, M. Dudley, and W. M. Vetter, "Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web Growth of Thin SiC Cantilevers," Journal of Applied Physics, vol. 92, no. 5, pp. 2391-2400, 2002. [Paper (1 MB PDF File)]

  • P. G. Neudeck, D. J. Spry, A. J. Trunek, J. A. Powell, and G. M. Beheim "Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth", in Materials Research Society Symposium Proceedings, vol. 742, Silicon Carbide 2002 - Materials, Processing, and Devices, S. E. Saddow, D. J. Larkin, N. S. Saks, A. Shoener, and M. Skowronski, Eds. Warrendale, PA: Materials Research Society, 2003, pp. K5.2.1-K5.2.6. [Paper (2 MB PDF File)]

  • P. G. Neudeck, J. A. Powell, D. J. Spry, A. J. Trunek, X. Huang, W. M. Vetter, M. Dudley, M. Skowronski, and J. Liu, "Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas During Step-Free Surface Heteroepitaxy," in Materials Science Forum, vol. 433-436, Silicon Carbide and Related Materials - 2002, P. Bergman and E. Janzen, Eds. Switzerland: Trans Tech Publications, 2003, pp. 213-216. [Paper (1.3 MB PDF File)]

  • R. S. Okojie, Thomas Holzheu, XianRong Huang, and Michael Dudley, "X-ray Diffraction Measurement of Doping Induced Lattice Mismatch in N-Type 4H-SiC Epilayers Grown on P-Type Substrates," Applied Physics Letters, vol. 83, no. 10, pp. 1971-1973, 2003. [Paper (840 KB PDF File)]

  • P. G. Neudeck and J. A. Powell, "Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas," in Silicon Carbide: Recent Major Advances, W. J. Choyke, H. Matsunami, and G. Pensl, Eds. Heidelberg, Germany: Springer-Verlag, 2003, pp. 179-205. [Final Manuscript (3.3 MB PDF File)]

  • P.G. Neudeck, J.A. Powell, A.J. Trunek, and D.J. Spry, "Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers," in Materials Science Forum, vol. 457-460, Silicon Carbide and Related Materials 2003, R. Madar, J. Camassel, and E. Blanquet, Eds., Switzerland: Trans Tech Publications, 2004, pp. 169-174. [Paper (812 KB PDF File]

  • A. J. Trunek, P.G. Neudeck, and D.J. Spry, "Comparative Growth Behavior of 3C-SiC Mesa Heterofilms With and Without Extended Defects," in Materials Science Forum, vol. 457-460, Silicon Carbide and Related Materials 2003, R. Madar, J. Camassel, and E. Blanquet, Eds. Switzerland: Trans Tech Publications, 2004, pp. 261-264. [Paper (1.0 MB PDF File]

  • R. S. Okojie, "Inelastic Stress Relaxation in Single Crystal SiC Substrates," in Materials Science Forum, vol. 457-460, Silicon Carbide and Related Materials 2003, R. Madar, J. Camassel, and E. Blanquet, Eds. Switzerland: Trans Tech Publications, 2004, pp. 375-378. [Paper (196 KB PDF File]

  • R. S. Okojie, M. Zhang, and P. Pirouz, "Residual Stresses and Stacking Faults in N-Type 4H-SiC Epilayers," in Materials Science Forum, vol. 457-460, Silicon Carbide and Related Materials 2003, R. Madar, J. Camassel, and E. Blanquet, Eds. Switzerland: Trans Tech Publications, 2004, pp. 529-532. [Paper (612 KB PDF File]

  • P. G. Neudeck, A. J. Trunek, and J. A. Powell, "Atomic Force Microscope Observation of Growth and Defects on As-Grown (111) 3C-SiC Mesa Surfaces," in Materials Research Society Symposium Proceedings, vol. 815, Silicon Carbide 2004 - Materials, Processing, and Devices, M. Dudley, P. Gouma, T. Kimoto, P. G. Neudeck, and S. E. Saddow, Eds. Warrendale, PA: Materials Research Society, 2004, pp. 59-64. [Paper (1.6 MB PDF File)]

  • R. S. Okojie and M. Zhang, "Thermoplastic Deformation and Residual Stress Topography of 4H-SiC Wafers," in Materials Research Society Symposium Proceedings, vol. 815, Silicon Carbide 2004 - Materials, Processing, and Devices, M. Dudley, P. Gouma, T. Kimoto, P. G. Neudeck, and S. E. Saddow, Eds. Warrendale, PA: Materials Research Society, 2004, pp. 133-138. [Paper (844 KB PDF File)]

  • J. A. Powell, P. G. Neudeck, A. J. Trunek, P. B. Abel, "Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas," in Materials Science Forum, vol. 483-485, Silicon Carbide and Related Materials 2004, R. Nipoti, A. Poggi, and A. Scorzoni, Eds. Switzerland: Trans Tech Publications, 2005, pp. 753-756. [Paper (216 KB PDF File)]

  • A. J. Trunek, P. G. Neudeck, and D. J. Spry, "Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers," in Materials Science Forum, vol. 527-529, Silicon Carbide and Related Materials 2005, R. P. Devaty, D. J. Larkin, and S. E. Saddow, Eds. Switzerland: Trans Tech Publications, 2006, pp. 247-250. [Paper (2 MB PDF File)]

  • P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, N. D. Bassim, M. A. Mastro, M. E. Twigg, R. T. Holm, R. L. Henry, and C. R. Eddy, Jr., "Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas," in Materials Research Society Symposium Proceedings, vol. 911, Silicon Carbide 2006 - Materials, Processing and Devices, T. Kimoto, M. Capano, M. Dudley, A. R. Powell, and S. Wang, Eds. Warrendale, PA: Materials Research Society, 2006, pp. 85-94. [Paper (7 MB PDF File)]

  • R. S. Okojie, X. Huang, M. Dudley, M. Zhang, and P. Pirouz, "Process-Induced Deformations and Stacking Faults in 4H-SiC," in Materials Research Society Symposium Proceedings, vol. 911, Silicon Carbide 2006 - Materials, Processing and Devices, T. Kimoto, M. Capano, M. Dudley, A. R. Powell, and S. Wang, Eds. Warrendale, PA: Materials Research Society, 2006, pp. 145-150. [Paper (1 MB PDF File)]

  • P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, X. R. Huang, and M. Dudley, "CVD Growth of 3C-SiC on 4H/6H Mesas," Chemical Vapor Deposition, vol. 12, pp. 531-540, 2006. [Final Manuscript (8 MB PDF File)]